M5M465165BJ |
RFQ for M5M465165BJ Required Field |
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| Product | Manufacturers | Pack | D/C |
| M5M465165BJ | - | - | - |
The M5M467405/465405BJ,BTP is organized 16777216-word by 4-bit, M5M467805/465805BJ,BTP is organized 8388608-word by 8-bit, and M5M465165BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are suitable for large-capacity memory systems with high speed and low power dissipation.
The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
Typical Application |
Features |
| Main memory unit for computers, Microcomputer memory, Refresh memory for CRT | `Standard 32 pin SOJ, 32 pin TSOP (M5M467405Bxx/M5M465405Bxx/M5M467805Bxx/M5M465805Bxx) Standard 50 pin SOJ, 50 pin TSOP (M5M465165Bxx)`Single 3.3 ± 0.3V supply`Low stand-by power dissipation 1.8mW (Max)............................... LVCMOS input level`Low operating power dissipationM5M467405Bxx-5,5S / M5M467805Bxx-5,5S .......360.0mW (Max) M5M467405Bxx-6,6S / M5M467805Bxx-6,6S .......324.0mW (Max)M5M465405Bxx-5,5S / M5M465805Bxx-5,5S....... 468.0mW (Max) M5M465405Bxx-6,6S / M5M465805Bxx-6,6S .......432.0mW (Max)M5M465165Bxx-5,5S 504.0mW (Max) M5M465165Bxx-6,6S 468.0mW (Max)`Self refresh capability* Self refresh current ....................................................400A (Max)`EDO mode , Read-modify-write, CAS before RAS refresh, Hidden refresh capabilities`Early-write mode , OE and W to control output buffer impedanc |
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Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
With respect to Vss |
-0.5to+4.6 |
V |
| VI | Input voltage |
-0.5to+4.6 |
V | |
| Vo | Output voltage |
-0.5to+4.6 |
V | |
| Io | Output current |
50 |
mA | |
| Pd | Power dissipation | Ta=25 |
1000 |
mW |
| Topr | Operating temperature |
0to70 |
||
| Tstg | Storage temperature |
-65 to +150 |
